Effect of Drift Layer on the Breakdown Voltage of Fully-Vertical GaN-on-Si p-n Diodes

This letter reports on the epitaxial growth and device fabrication of metal-organic chemical vapor deposition grown fully vertical GaN-on-Si p-n diodes. A strong dependence in the electrical characteristics and epitaxial growth of n(-)-GaN drift layer was revealed by analyzing the threading dislocations, and carrier properties of the drift layers and current-voltage characteristics of the fabricated p-n diodes. Further, our GaN-on-Si vertical p-n diode with a 2.3-mu m-thick n(-)-GaN drift layer exhibited an on-resistance of 7.7 m Omega.cm(2), a turn-on voltage of 3.4 V, and a breakdown voltage of 369 V, respectively.