期刊
IEEE ELECTRON DEVICE LETTERS
卷 38, 期 11, 页码 1567-1570出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2017.2749678
关键词
HR-GaN; cap layer; HEMT; p-GaN gate; normally-off; breakdown voltage; current collapse
资金
- Key Research and Development Program of Jiangu Province [BE2016084]
- National Natural Science Foundation of China [11404372]
- Youth Innovation Promotion Association CAS [2014277]
- National Key Scientific Instrument and Equipment Development Project of China [2013YQ470767]
- National Key Research and Development Program of China [2016YFC0801203]
In this letter, a device structure of high-resistivity-cap-layer HEMT (HRCL-HEMT) is developed for normally-off p-GaN gate HEMT toward high breakdown voltage and low current collapse. It demonstrates that the breakdown capability and current collapse of the device were effectively improved due to the introduction of a thick HR-GaN cap layer. The fabricated HRCL-HEMT exhibits a high breakdown voltage of 1020 V at I-DS = 10 mu A/mm with the substrate grounded. Meanwhile, the qdynamic R-on is only 2.4 times the static R-on after off-state V-DS stress of 1000 V with the substrate grounded (the OFF to ON switching time interval is set to 200 mu s).
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