期刊
IEEE ELECTRON DEVICE LETTERS
卷 38, 期 6, 页码 783-785出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2017.2696986
关键词
Ga2O3; Schottky barrier diode; Trench MOS
资金
- Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan, through the NIMS Nanofabrication Platform in Nanotechnology Platform Project
- MEXT Nanotechnology Platform [12025014(F-16-IT-0024), 12025105(F-16-WS-0034)]
- Council for Science, Technology and Innovation, Cross-ministerial Strategic Innovation Promotion Program, Next-generation power electronics (funding agency: NEDO)
We developed beta-Ga2O3 trench MOS-type Schottky barrier diodes (MOSSBDs) for the first time. A Si-doped Ga2O3 layer was grown via halide vapor phase epitaxy on a single-crystal Sn-doped beta-Ga2O3 (001) substrate. The trench structure was fabricated using dry etching and photolithography. HfO2 film was used as the dielectric film of the trench MOS structure. The specific on-resistances (R-ON, (SP)) of the normalSBDand trenchMOSSBDwere about 2.3 and 2.9 m Omega cm(2), respectively. The reason the R-ON, (SP) of MOSSBD was a little higher than that of the Schottky barrier diodes (SBD) is that the current path decrease as a result of forming the trench MOS structure. The normal SBD had a large reverse leakage current due to the large electricfield at the anodemetal/semiconductorinterface. On the other hand, the trench MOSSBD had several orders of magnitude smaller leakage current. We, thus, demonstrated that incorporating the trench MOS structure in Ga2O3 is highly effective for decreasing the reverse leakage current.
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