Low-Voltage Unipolar Inverter Based on Top-Gate Electric-Double-Layer Thin-Film Transistors Gated by Silica Proton Conductor

In this letter, low-voltage unipolar inverter based on solid-state silica electric-double-layer (EDL) top-gate thin-film transistorswas fabricated. A silicon oxide film deposited by the plasma-enhanced chemical vapor deposition method at room temperature was used as inorganic electrolyte insulator. Due to the formation of the EDL, the inverter can work at low voltages that are less than 1 V. The voltage transfer curves and the dynamic switching behaviors at different switching frequencieswere investigated. The inverters can be integrated with low-voltage applications, such as biosensors, portable electronics, and synaptic devices, which work at low operation voltages and relatively low speeds.