Low-Frequency Noise in High-Mobility a-InGaZnO/InSnO Nanowire Composite Thin-Film Transistors

In this letter, high-performance amorphous indium-gallium-zinc-oxide (a-InGaZnO) and indiumtin-oxide(ITO) nanowire (NW) composite thin-film transistors (TFTs) are fabricated via a sol-gel approach. By incorporating 0.5 wt% ITO NWs into the a-InGaZnO thin film, the composite TFTs can achieve an enhanced field-effect mobility of 76.5 cm(2)/V.s and a high current density of 73.3 mu A/mu m with 10-mu m channel length. The low-frequency noise (LFN) characteristic of the composite TFTs fits the classical 1/f noise model very well in the frequency range 1 to 1000 Hz. The subthreshold slope and LFN results provide an alternative explanation to the enhanced performance of the composite TFTs due to the decreased interfacial trap density. The a-InGaZnO/ITO NW composite TFTs are one of the promising candidates for the development of high-speed low-cost electronics.