期刊
IEEE ELECTRON DEVICE LETTERS
卷 38, 期 8, 页码 1047-1050出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2017.2721953
关键词
High voltage thin film transistors (HV TFTs); offset drain TFTs; zinc oxide; ZnO; PEALD; oxide TFTs
资金
- The Dow Company
- NASA
High-voltage thin-film transistors (TFTs) are useful building blocks for thin-film circuits. In this letter, we demonstrate ZnO high-voltage TFTs with offset drain. For these devices, the drain-to-source breakdown voltage increases from about 30 to >80 V as the drain offset length is increased from 0 to similar to 2 mu m, with little degradation in the I-V characteristics. The fabrication process is simple and uses a maximum temperature of 200 degrees C, which allows the high-voltage ZnO TFTs to be readily integrated in thin-film circuits on either glass or polymeric substrates.
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