Comparison on the Synchronization of Two Parallel GaAs Photoconductive Semiconductor Switches Excited by Laser Diodes

In this letter, the synchronization of GaAs photoconductive semiconductor switches in two electrically driven configurations for laser diodes excitation is investigated. Comparisons on the synchronization are carried out by varying the bias electric field and optical excitation energy. The optimum synchronization of 296 ps is achieved at 1.2 kV with optical excitation energy of 1.9 mu J. The results demonstrate the relationship between the synchronization and transient carriers' population ratio among the intervalley.