期刊
IEEE ELECTRON DEVICE LETTERS
卷 38, 期 8, 页码 1117-1120出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2017.2718626
关键词
Varactor; indium-gallium-zinc-oxide (IGZO); flexible electronics; thin-film technology; MOS
资金
- Swiss National Science Foundation, Switzerland, through the project WISDOM [200021E-160347/1]
- Swiss National Science Foundation (SNF) [200021E-160347] Funding Source: Swiss National Science Foundation (SNF)
In this letter, flexible voltage-controlledcapacitors (varactors) based on an amorphous Indium-Gallium-Zinc- Oxide (a-IGZO) semiconductor are presented. Two different varactor designs and their influence on the capacitance tuning characteristics are investigated. The first design consists of a top electrode finger structure which yields a maximum capacitance tunability of 6.9 at 10 kHz. Second, a novel interdigitated varactor structure results in a maximum tunability of 93.7 at 100 kHz. The design and frequency-dependencies of the devices are evaluated through C-V measurements. Furthermore, we show bending stability of the devices down to a tensile radius of 6mm without altering the performance. Finally, a varactor is combined with a thin-film resistor to demonstrate a tunable RC-circuit for impedance matching and low-pass filtering applications. The device fabrication flow and material stack are compatible with standard flexible thin-film transistor fabrication which enables parallel implementation of analog or logic circuitry and varactor devices.
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