Novel Superjunction LDMOS (>950 V) With a Thin Layer SOI

A novel superjunction (SJ) lateral double-diffused MOSFET (> 950 V) with a thin layer SOI combining the advantage of low specific on-resistance R-on, (sp) of the SJ and the high breakdown voltage V-B of the thin SOI is proposed and experimentally demonstrated in this letter. Based on our previously developed equivalent substrate model, the optimized SJ endows the device with a respectably reduced R-on,R- sp without sacrificing V-B. Meanwhile, the thin layer SOI is designed with the enhanced dielectric layer field principle to carry out a high V-B. The experimental results exhibit a R-on,R- sp of 145 m Omega.cm(2) with a V-B of 977 V. This represents a reduction in R-on,R- sp by 18.1% when compared with the theoretical R-on,R- sp alpha V-B(2.5) silicon limit.