期刊
IEEE ELECTRON DEVICE LETTERS
卷 38, 期 2, 页码 175-178出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2016.2646758
关键词
RRAM; Hf1-xAlxOy; variability; data retention
资金
- European Union's H2020 research and innovation programme [640073]
- ENIAC Joint Undertaking [2013-2]
- PANACHE [621217]
In this letter, we propose an effective route to reduce the cell-to-cell variability in 1T-1R-based random accessmemories (RRAM) arrays by combining the excellent switching performance of Hf1-xAlxOy with an optimized incremental step pulse with verify algorithm for programming. The strongly reduced cell-to-cell variability improves the thermal and post-programming stability of the arrays, which is relevant for many applications of the RRAM technology. Finally, the retention study at 150 degrees C enables the prediction of the data storage capability.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据