期刊
ACS NANO
卷 14, 期 11, 页码 15646-15653出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.0c06509
关键词
van der Waals junction; TMDs; Alq(3); NPB; junction field-effect transistor
类别
资金
- National Research Foundation of Korea [2017R1A5A1014862]
- National Research Foundation of Korea [2017R1A5A1014862] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Two-dimensional (2D) transition metal dichalcogenide (TMD) hetero PN junctions with a van der Waals (vdW) interface have received much attention, because PN diodes are basically important to control the vertical current across the junction. Interestingly, the same vdW PN junction structure can be utilized for junction field-effect transistors (JFETs) where in-plane current is controlled along the junction. However, 2D vdW JFETs seem rarely reported, despite their own advantages to achieve when good vdW junction is secured. Here, we present high-performance p-MoTe2 JFETs using almost perfect vdW organic Alq(3)/p-MoTe2 junctions and demonstrate organic NPB/n-MoS2 JFETs. The p- and n-channel JFETs stably show high mobilities of 60-80 and similar to 800 cm(2)/V s, respectively, along with a high ON/OFF current ratio (>1 x 10(5)) and minimal gate leakage at 5 V even after a few months. Such performances are attributed to a quality vdW junction at organic layer/TMD interfaces.
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