期刊
ACS NANO
卷 14, 期 11, 页码 16114-16121出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.0c08133
关键词
multistacked coupled quantum well; hexagonal boron nitride; tungsten disulfide; negative differential resistance; double-barrier heterostructures; resonant tunneling diodes; quantum confinements
类别
资金
- National Research Foundation of Korea (NRF) - Ministry of Science, ICT & Future Planning [NRF 2019M3F3A1A02071595]
- DGIST R&D Programs by the Korea government (Ministry of Education) [20-CoE-NT-02, 20-IT-01]
- DGIST R&D Programs by the Korea government (Ministry of Science, ICT & Future Planning) [20-CoE-NT-02, 20-IT-01]
- National Research Foundation of Korea [22A20152013024, 20-IT-01, 20-COE-NT-02] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Quantum confinements, especially quantum in narrow wells, have been investigated because of their controllability over electrical parameters. For example, quantum dots can emit a variety of photon wavelengths even for the same material depending on their particle size. More recently, the research into two-dimensional (2D) materials has shown the availability of several quantum mechanical phenomenon confined within a sheet of materials. Starting with the gapless semimetal properties of graphene, current research has begun into the excitons and their properties within 2D materials. Even for simple 2D systems, experimental results often offer surprising results, unexpected from traditional studies. We investigated a coupled quantum well system using 2D hexagonal boron nitride (hBN) barrier as well as 2D tungsten disulfide (WS2) semiconductor arranged in stacked structures to study the various 2D to 2D interactions. We determined that for hexagonal boron nitride-tungsten disulfide (hBN/WS2) quantum well stacks, the interaction between successive wells resulted in decreasing bandgap, and the effect was pronounced even over a large distance of up to four stacks. Additionally, we observed that a single layer of isolating hBN barriers significantly reduces interlayer interaction between WS2 layers, while still preserving the interwell interactions in the alternative hBN/WS2 structure. The methods we used for the study of coupled quantum wells here show a method for determining the respective exciton energy levels and trion energy levels within 2D materials and 2D materials-based structures. Renormalization energy levels are the key in understanding conductive and photonic properties of stacked 2D materials.
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