期刊
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SPIE-INT SOC OPTICAL ENGINEERING
DOI: 10.1117/12.2568197
关键词
Avalanche photodiodes; optoelectronics; device modeling and CAD software; optic fiber telecommunication
类别
Modeling of InGaAs/AlGaAsSb avalanche photodiodes (APDs) is presented in this work. Based on a drift-diffusion theory, the APD dark- and photo-current and multiplication gain are simulated. The frequency response and bandwidth are also computed based on a derived formalism by following the carrier transit analyses. Modeling results of I-V curves, multiplication gain, breakdown voltage, excess noise factor, -3dB bandwidth and gain-bandwidth product are demonstrated. Some results are compared with the experimental report. The APD performance is further evaluated with respect to two of the key design factors, the multiplication and the absorption layer thickness, respectively.
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