期刊
2020 47TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)
卷 -, 期 -, 页码 2663-2666出版社
IEEE
DOI: 10.1109/pvsc45281.2020.9300369
关键词
indium sulfide; intermediate band photovoltaics; epitaxial growth; pin-heterojunction
资金
- Deutsche Forschungsgemeinschaft within the project Zwischenband-Solarzellen auf Basis Ubergangsmetall-substituierter Indium-Thiospinelle [411083473]
Indium sulfide hyperdoped with vanadium has been predicted to be a promising material to realize an intermediate band (IB) solar cell. Using co-evaporation of the elements we grew In2S3:V on (111)-oriented p-Si substrates. As transparent top electrode n-ZnO:Al is used to realize heterostructure pin-solar cells. Investigations of structural properties reveal epitaxial growth independent of the vanadium doping content. We further characterize pin-heterostructure solar cells by current-voltage characteristics in the dark and under illumination. We do not observe an increase of short circuit current density for V-doped samples, which indicates that the IB is fully occupied.
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