期刊
出版社
IEEE
DOI: 10.1109/WiPDAAsia49671.2020.9360271
关键词
InAlN/GaN HEMT; T-gate; high frequency application
资金
- National Central University
- Department of Electrical Engineering, R.O.C.
- National Chung-Shan Institute of Science & Technology, R.O.C [NCSIST-301-V109(108)]
Since the communication techniques for 5G developed recent years, GaN-based HEMTs have been very promising candidates for high-speed and high-power electronic applications. Due to the intrinsic properties such as breakdown voltage, electron mobility and electron concentration compared to Si, power capability and switching speed can be improved easily by introducing GaN HEMTs into MMICs. But for conventional AlGaN/GaN HEMT, reducing the thickness of barrier(t(barrier)) to prevent short channel effect will cause electric properties degrade [1], such as carrier concentration (N-s) and mobility [2]. Therefore, in this work, we replace AlGaN with In0.17Al0.83N, which can be scaled below to 10nm without decreasing N-s. Also, growing a thin GaN cap layer to prevent barrier from oxidation and fabricating T-shaped gate to improving high frequency characteristics are done
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