3.8 Proceedings Paper

Rational Engineering of the Dielectric Properties of Thin Silica Layers with a Single Plane of AgNPs

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IEEE
DOI: 10.1109/ICD46958.2020.9341862

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  1. program IDEX Actions Thematiques Strategiques - ATS 2015 of the Universite de Toulouse under project SEPHIR [2016-066-CIF-D-DRVD]
  2. UMS Raymond Castaing of Universite de Toulouse

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Interface properties of dielectrics are of outmost importance when dealing with phenomena as charge injection or secondary electron emission. When the dielectric thickness scales down to the nm range, a deviation from the bulk material properties occurs; therefore, a possibility to tune the surface properties comes by modifying dielectrics at its sub-surface. This paper focuses on the precision of plasma-based processes in order to elaborate thin silica dielectric layers with a single plane of silver nanoparticles (AgNPs) at its sub-surface and thus to control their behavior under electrical stress. An illustration of the modulated properties of such nanostructured dielectrics is given through current measurements and electron emission.

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