Insight into Threshold Voltage and Drain Induced Barrier Lowering in Negative Capacitance Field Effect Transistor

In this paper, we have discussed threshold voltage and drain induced barrier lowering in NCFET. Threshold voltage in NCFET is lower as compared to MOSFET which is mainly because of negative equivalent oxide capacitance in NCFET. Further, we have discussed drain induced barrier lowering in NCFET and MOSFET. An increase in drain bias in MOSFET leads to decrease in threshold voltage and an increase in leakage current whereas in NCFET increase in drain bias leads to increase in threshold voltage and decrease in leakage current. We have obtained a positive value of DIBL factor for MOSFET and negative value for NCFET.

Automated summary

The paper mainly discusses the threshold voltage and drain induced barrier lowering in NCFET, highlighting the lower threshold voltage and negative DIBL factor in NCFET.