期刊
PROGRESS IN PHOTOVOLTAICS
卷 29, 期 1, 页码 32-46出版社
WILEY
DOI: 10.1002/pip.3338
关键词
lifetime; passivated contact; thin oxide; TOPCon
资金
- Ministry of Science, ICT & Future Planning [2017M1A2A2086911]
- Research and Development of the Korea Institute of Energy Research [C0-2402]
- National Research Foundation of Korea [2017M1A2A2086911] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Passivated contact structures, such as TOPCon and POLO solar cells, have made significant progress in efficiency. Analyzing the interface characteristics of P-doped poly-Si/SiO2/c-Si using algorithms based on the extended SRH theory can quantify the passivation effects and provide valuable insights into the properties of these structures. Through the quantitative analysis model using carrier lifetime theory, the passivation properties of P-doped poly-Si/SiO2/c-Si were investigated.
Passivated contact structures are often representative of tunnel oxide passivated contact (TOPCon) and polycrystalline silicon on oxide (POLO) solar cells. These passivated contact technologies in silicon solar cells have experienced great strides in efficiency. However, characteristics analysis of poly-Si/SiO2 applied to TOPCon and POLO solar cells as a carrier-selective and passivated contact is still challenging because the silicon oxide film is very thin (<1.5 nm), poly-Si and silicon oxide properties change during thermal treatment for passivation effects, and dopant diffusion from poly-Si layer to the silicon wafer occurs. In this study, the interfacial analysis was performed by applying an algorithm based on the extended Shockley-Read-Hall (SRH) theory to the P-doped poly-Si/SiO2/c-Si structure. Quantitative parameters of the P-doped poly-Si/SiO2/c-Si interface were extracted by fitting the measured and simulated lifetime curves with algorithms, such as D-it (interface trap density) and Q(f) (fixed charge), from which we were able to elucidate the passivation effect of the interface. The interface analysis method using this algorithm is meaningful in that it can quantify the passivation characteristics of TOPCon with very thin silicon oxide film. The interface characteristics were also analyzed using the injection-dependent lifetime after thermal treatment of P-doped poly-Si/SiO2/c-Si samples for passivation effect. After the 850 degrees C thermal treatment, the following best passivation effects were verified, namely, psi(s) = 0.248 eV, D-it = 1.0 x 10(11) cm(-2)center dot eV(-1), Q(f) = 2.4 x 10(12) cm(-2), and J(02) = 370 pA center dot cm(-2). Through the analysis model using carrier lifetime theory, we investigated quantitatively the passivation properties of P-doped poly-Si/SiO2/c-Si.
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