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Synthesis of two-dimensional transition metal dichalcogenides for electronics and optoelectronics

期刊

INFOMAT
卷 3, 期 4, 页码 362-396

出版社

WILEY
DOI: 10.1002/inf2.12161

关键词

electronic and optoelectronic application; transition metal dichalcogenides; two-dimensional materials; van der Waals heterojunctions

资金

  1. Young Teachers' Startup Fund for Scientific Research of Shenzhen University [860-000002110426]
  2. Natural Science Foundation of Shenzhen University [2019013]
  3. National Natural Science Fund of China [6181101252, 61435010, 61875138, 61904110, 51472096]
  4. Shenzhen Science and Technology Project [JCYJ20180305125340386, JCYJ20180507181702150]

向作者/读者索取更多资源

This article reviews the research progress in the preparation and applications of ultrathin two-dimensional transition-metal dichalcogenides (TMDCs) and TMDCs-based heterojunctions over the past decade. It comprehensively outlines the preparation methods and recent advancements in electronic and optoelectronic devices.
Tremendous efforts have been devoted to preparing the ultrathin two-dimensional (2D) transition-metal dichalcogenides (TMDCs) and TMDCs-based heterojunctions owing to their unique properties and great potential applications in next generation electronics and optoelectronics over the past decade. However, to fulfill the demands for practical applications, the batch production of 2D TMDCs with high quality and large area at the mild conditions is still a challenge. This feature article reviews the state-of-the-art research progresses that focus on the preparation and the applications in electronics and optoelectronics of 2D TMDCs and their van der Waals heterojunctions. First, the preparation methods including chemical and physical vapor deposition growth are comprehensively outlined. Then, recent progress on the application of fabricated 2D TMDCs-based materials is revealed with particular attention to electronic (eg, field effect transistors and logic circuits) and optoelectronic (eg, photodetectors, photovoltaics, and light emitting diodes) devices. Finally, the challenges and future prospects are considered based on the current advance of 2D TMDCs and related heterojunctions.

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