期刊
IEEE SENSORS JOURNAL
卷 21, 期 1, 页码 213-221出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSEN.2020.3013017
关键词
Silicon; Piezoresistance; Sensitivity; Pressure sensors; Resistors; Stress; Piezoresistive pressure sensor; MEMS; figure of merit
资金
- Fonds pour la formation a la Recherche dans l'Industrie et dans l'Agriculture (FRIA) through the Fonds de la Recherche Scientifique - FNRS
- Biocloud 4.0 project - Wallonia (Belgium)
This article introduces a new classification methodology for high resolution membrane based MEMS piezoresistive pressure sensors, based on a new figure of merit (FoM) that allows for evaluating the ultimate limit of detection of a technology. The proposed FoM is validated through extensive literature survey and comparisons, showing that wet etching techniques outperform reactive ion etching in membrane release for higher performance.
In this article, we are presenting a new classification methodology for high resolution membrane based MEMS piezoresistive pressure sensors embedded in Internet of Things (IoT) nodes or in body-implanted devices. This is based on a new figure of merit (FoM) that includes the four key parameters as the power consumption, the area, the noise and the sensitivity of the transducer. The proposed classification allows to directly evaluate, based on power consumption and area requirements, the ultimate limit of detection that can be reached by a proposed technology. The derivation of the proposed FoM is validated based on wide survey and comparisons of literature results. It shows that, until now, wet etching technics for membrane release still allow for reaching higher performances than reactive ion etching.
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