Long catalyst-free InAs nanowires grown on silicon by HVPE

We report for the first time on the hydride vapor phase epitaxy (HVPE) growth of long (26 mu m) InAs nanowires on Si(111) substrate grown at a standard rate of 50 mu m h(-)(1). The nanowires grow vertically along the (111)B direction and exhibit a well faceted hexagonal shape with a constant diameter. The effect of the experimental parameters, growth temperature and III/V ratio, is investigated. The thermodynamic and kinetic mechanisms involved during the growth of such long nanowires are identified. It is demonstrated that growth occurs through direct condensation of InCl and As-4/As-2 gaseous species. Dechlorination of adsorbed InCl molecules is the limiting step at low temperature. Structural analysis through high resolution transmission electron microscopy (HRTEM) and high-angle annular dark-field (HAADF) imaging was performed. The high As-4 partial pressure of the HVPE environment induces the presence of both wurtzite and zinc-blende phases. The results emphasize the potential of the low cost HVPE technique for the monolithic integration of arrays of long InAs nanowires on silicon.

Automated summary

In this study, long InAs nanowires (26 μm) were successfully grown on Si(111) substrate using HVPE method at a standard rate of 50 μm h(-)(1). The nanowires exhibited vertical growth along the (111)B direction with a well-faceted hexagonal shape and constant diameter. The growth temperature and III/V ratio were found to have significant effects on the growth process, with the mechanisms involving direct condensation of InCl and As-4/As-2 gaseous species being identified.