Performance Boosts in n-Type Lateral Double-Diffused MOSFET With Process-Induced Strain Using Contact Etch Stop Layer Stressor

In this brief, the contact etch stop layer (CESL) stressor is introduced to improve the performance of n-type lateral double-diffused MOSFET (nLDMOSFET) with various operating voltages. Three groups of nLDMOSFETs were studied to demonstrate the effects of the CESL stressor. The electrical properties were carefully characterized, and the tip-enhanced Raman spectroscopy measurements were carried out to examine the process-induced strain directly. It is found that nLDMOSFETs with the strained SiN CESL have larger output current, transconductance (g(m)), and higher breakdown voltage (BV). The strained SiN CESL introduces tensile strain in the device and results in the performance boosts, which are verified by negative Raman peak shift mappings and TCAD simulations. The strained SiN CESL could effectively decrease the specific ON-resistance (R-on) and improve the BV of the nLDMOSFET, due to the mobility enhancement.

Automated summary

In this study, the strain SiN CESL was introduced to enhance the performance of nLDMOSFET by increasing output current, transconductance, and breakdown voltage. The enhanced performance was attributed to the tensile strain introduced by the strain SiN CESL, which effectively reduced specific ON-resistance and improved BV of the nLDMOSFET.