Multiferroic properties and resistive switching behaviors of Ni0.5Zn0.5Fe2O4 thin films

In this study, we have demonstrated bipolar resistive switching along with ferroelectricities of Ni0.5Zn0.5Fe2O4 (NZFO) thin films using Au/NZFO/LNO/Si structure. Previous studies have indicated that the type of intrinsic defects and defect concentration could be changed by choosing the annealing atmosphere. In this work, the influence of anneal atmosphere on structure and properties of NZFO was investigated by annealing samples respectively in oxygen and nitrogen. According to experiment results, oxygen vacancy and the strain stress existed in NZFO films have large effect on properties of NZFO. X-ray diffraction (XRD) patterns showed that the NZFO thin films exhibited mixed polycrystalline and high a-axis orientation under different annealing atmosphere. The saturation magnetization of the samples annealed in nitrogen and oxygen atmospheres were 0.414 and 0.892 emu/cm(3), and the remnant polarization values were 1.789 and 1.082 mu C/cm(2), respectively. The I-V curves of the samples indicated that NZFO have improved resistive switching property annealed in nitrogen atmosphere.

Automated summary

The study demonstrated bipolar resistive switching and ferroelectricities of Ni0.5Zn0.5Fe2O4 (NZFO) thin films using Au/NZFO/LNO/Si structure. It was found that annealing atmosphere influences the structure and properties of NZFO, with oxygen vacancy and strain stress playing a significant role. The saturation magnetization and remnant polarization values of the samples were affected by the annealing atmosphere, with improved resistive switching property observed in NZFO annealed in nitrogen atmosphere.