4.6 Article

Hall effect and symmetry breaking in the nonmagnetic metal LuB12 with dynamic charge stripes

期刊

PHYSICAL REVIEW B
卷 103, 期 3, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.103.035117

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  1. Russian Science Foundation [17-12-01426, 21-12-00186]
  2. Russian Foundation for Basic Research [18-02-01152]

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A comprehensive study of magnetoresistance and Hall effect in nonmagnetic metal LuB12 single crystals was conducted, revealing an anomalous positive contribution to Hall effect and its association with magnetoresistance peak. The metal exhibits inhomogeneous distribution of electron density, and various scenarios involving Fermi surface topology, relaxation time of charge carriers, and interaction with external magnetic field and fluctuating charge stripes were analyzed. The origin of SdH oscillations in this nonequilibrium metal with electron phase separation and strong charge carrier scattering was discussed.
A comprehensive study of magnetoresistance and Hall effect has been performed for the set of the single crystals of nonmagnetic metal LuB12 with the Jahn-Teller instability of the boron cage and dynamic charge stripes forming along < 110 > direction. An anomalous positive contribution to Hall effect for a particular direction of magnetic field H//[001] is found in the single crystals of LuB12 of the highest quality. This contribution arising at T-E similar to 150K is shown to increase drastically when approaching the disordered ground state below T-* similar to 60K. The Hall effect anomaly is shown to appear in combination with the peak of magnetoresistance. The various scenarios allowing for the topology of Fermi surface, anisotropy of relaxation time for charge carriers, and interaction of external magnetic field with the filamentary structure of fluctuating charge stripes are analyzed to explain the features of magnetotransport in this metal with inhomogeneous distribution of electron density. The origin of SdH oscillations, which are observed in this nonequilibrium metal with electron phase separation and strong charge carrier scattering, is discussed.

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