4.6 Article

Dual-gated mono-bilayer graphene junctions

期刊

NANOSCALE ADVANCES
卷 3, 期 2, 页码 -

出版社

ROYAL SOC CHEMISTRY
DOI: 10.1039/d0na00547a

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资金

  1. Academy of Finland [276376, 295777, 312297, 314810]
  2. Academy of Finland Flagship Programme [320167]
  3. European Union's Horizon 2020 research and innovation program [820423]
  4. ERC [834742]
  5. European Research Council (ERC) [834742] Funding Source: European Research Council (ERC)
  6. Academy of Finland (AKA) [276376, 312297, 295777, 314810, 276376, 314810, 312297, 295777] Funding Source: Academy of Finland (AKA)

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The research team demonstrated an electrically tunable lateral junction at atomically sharp interfaces between mono- and bilayer graphene, systematically investigating the transport properties. They found that the difference in conductivity of graphene channels at the mono-bilayer interface depends greatly on the doping level, and the existence of a gate tunable junction provides a possible path for functional applications of graphene in next-generation electronics.
A lateral junction with an atomically sharp interface is extensively studied in fundamental research and plays a key role in the development of electronics, photonics and optoelectronics. Here, we demonstrate an electrically tunable lateral junction at atomically sharp interfaces between dual-gated mono- and bilayer graphene. The transport properties of the mono-bilayer graphene interface are systematically investigated with I-ds-V-ds curves and transfer curves, which are measured with bias voltage V-ds applied in opposite directions across the asymmetric mono-bilayer interface. Nearly 30% difference between the output I-ds-V-ds curves of graphene channels measured at opposite V-ds directions is observed. Furthermore, the measured transfer curves confirm that the conductance difference of graphene channels greatly depends on the doping level, which is determined by dual-gating. The V-ds direction dependent conductance difference indicates the existence of a gate tunable junction in the mono-bilayer graphene channel, due to different band structures of monolayer graphene with zero bandgap and bilayer graphene with a bandgap opened by dual-gating. Simulation of the I-ds-V-ds curves based on a new numerical model validates the gate tunable junction at the mono-bilayer graphene interface from another point of view. The dual-gated mono-bilayer graphene junction and new protocol for I-ds-V-ds curve simulation pave a possible way for functional applications of graphene in next-generation electronics.

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