期刊
RSC ADVANCES
卷 11, 期 8, 页码 4539-4546出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/d0ra09278a
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资金
- FIST 2 (DST, Government of India) [SR/FIST/PS1-159/2010]
- DST SERB (Govt. of India) [SB/EMEQ-002/20013]
- UGC, Govt. of India under XIIth plan of UGC SWRO's Faculty Development Programme [FIP/12th Plan/KLCA064 TF 05]
Through nanostructuring and doping methods for Fermi level tuning of the Bi2Te3 system, the thermoelectric properties of the material have been improved, including better thermal conductivity and transport properties.
The techniques of size reduction and defect engineering have attracted great interest as an effective strategy for developing new and modified thermoelectric materials with high performance. Here, we investigated the thermoelectric properties of the Bi2Te3 system modified by Fermi level tuning through the methods of nanostructuring and doping. Band structure modification and Fermi level shift contribute to the better thermoelectric performance of the material. A minimum thermal conductivity of 0.72 W K-1 was obtained at 440 K with a reduction of 50% as compared to the pristine sample. The improved transport properties along with considerably reduced thermal conductivity result in a two-fold improved figure of merit of 0.295 at 420 K for the nanostructured sample Bi0.4Sb1.6Te3 over pristine Bi2Te3.
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