Spectromicroscopy and imaging of photoexcited electron dynamics at in-plane silicon pn junctions

The ultrafast spatiotemporal imaging of photoexcited electrons is essential to understanding interfacial electron dynamic processes. We used time- and energy-resolved photoemission electron microscopy (PEEM) to investigate the photoexcited electron dynamics at multiplex in-plane silicon pn junctions. We found that the measured kinetic energy of photoelectrons from n-type regions is higher than that from p-type regions owing to different work functions. Interestingly, the kinetic energy of outer n-type regions is higher than that of inner n-type regions, which is caused by the reverse bias induced by photoemission. Time-resolved PEEM results reveal different evolution rates of hot electrons in different doping regions. The rise time of the n-type (outer n-type) regions is faster than that of the p-type (inner n-type) regions. So, closed doping patterns can influence the electron spectra and dynamics at the micro-nano scale. These results help us to understand the ultrafast dynamics of carriers at in-plane interfaces and optimize optoelectronic integrated devices with complex heterojunctions.

Automated summary

Theoretically, the kinetic energy of photoelectrons from n-type regions was found to be higher than that of p-type regions due to different work functions. Surprisingly, the outer n-type regions exhibited higher kinetic energy compared to inner n-type regions, caused by reverse bias induced by photoemission. Time-resolved PEEM results showed varying evolution rates of hot electrons in different doping regions.