4.6 Article

Manipulation of electronic property of epitaxial graphene on SiC substrate by Pb intercalation

期刊

PHYSICAL REVIEW B
卷 103, 期 8, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.103.085403

关键词

-

资金

  1. U.S. Department of Energy (US), Office of Science, Basic Energy Sciences, Materials Science and Engineering Division
  2. National Energy Research Scientific Computing Centre (US) in Berkeley, CA
  3. U.S. DOE [DE-AC02-07CH11358]
  4. National Natural Science Foundation of China (CN) [11374055]

向作者/读者索取更多资源

This paper systematically investigates the effect of lead intercalation on the structural and electronic properties of epitaxial graphene on the SiC substrate. The band structure of Pb-intercalated few-layer graphene can be effectively tuned through intercalation conditions, showing potential for manipulating the electronic properties of graphene layers. Lead intercalation at the interface between the buffer layer and the substrate decouples the layers and can transform the BL into a p-doped graphene layer.
Manipulating the electronic properties of graphene has been a subject of great interest since it can aid material design to extend the applications of graphene to many different areas. In this paper, we systematically investigate the effect of lead (Pb) intercalation on the structural and electronic properties of epitaxial graphene on the SiC(0001) substrate. We show that the band structure of Pb-intercalated few-layer graphene can be effectively tuned through changing intercalation conditions, such as coverage, location of Pb, and the initial number of graphene layers. Lead intercalation at the interface between the buffer layer (BL) and the SiC substrate decouples the BL from the substrate and transforms the BL into a p-doped graphene layer. We also show that Pb atoms tend to donate electrons to neighboring layers, leading to an n-doping graphene layer and a small gap in the Dirac cone under a sufficiently high Pb coverage. This paper provides useful guidance for manipulating the electronic properties of graphene layers on the SiC substrate.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据