Transparent CsPbBr3 Quantum Dot Photodetector with a Vertical Transistor Structure

Though flexible and transparent electronics has increasingly attracted attention, there are still challenges in developing vertical phototransistors to obtain photons efficiently and maintaining the gate tunable property of the transparent substrate. The active layers of the CsPbBr3 quantum dot are sandwiched between an organic blend layer of poly-TPD:PCBM (1:1) and an orthogonally binary dielectric layer of polymethyl methacrylate and polyacrylic acid. The energy-favorable interface between the organic blend film and CsPbBr3 quantum dot is used for effective exciton dissociation and charge separation, whereas the orthogonally binary dielectric layer on the transparent indium tin oxide substrate is incorporated for effective gate tunable property. The obtained CsPbBr3 quantum dot-based photodetector has a transparency of up to 93% in the visible light range with a responsivity of 80 mA/W and a detectivity of 2.2 X 10(11) Jones. This work offers pioneering opportunities in emerging wearable optoelectronics for light detection with sensitivity and transparency.

Automated summary

The study shows that by effectively controlling the active layer of CsPbBr3 quantum dots, as well as the structural design of the organic blend layer and orthogonally binary dielectric layer, high transparency and gate tunable property of the CsPbBr3 quantum dot photodetector can be achieved. The photodetector has a transparency of up to 93% in the visible light range, with a responsivity of 80 mA/W and a detectivity of 2.2 X 10(11) Jones.