Microstructuring GaAs Using Reverse-Patterning Lithography: Implications for Transistors and Solar Cells

This paper introduces reverse patterning lithography (RPL), which combines microcontact printing (mu CP) of a custom-designed fluorinated adsorbate on gallium arsenide (GaAs) and the deposition of a polymeric resin as a wet-etching resist. Positive patterns were formed on GaAs wafers having various designed shapes and sharp edges at a lateral resolution of 100.0 pm and a depth of up to 3.0 mu m. The RPL method benefits from being cost-effective and time-efficient compared to conventional photo-lithography and has the potential for use in the fabrication of various GaAs devices, including solar cells, light-emitting diodes, and microwave and radio frequency transistors.

Automated summary

Reverse patterning lithography (RPL) combines microcontact printing of a custom-designed fluorinated adsorbate on gallium arsenide (GaAs) and the deposition of a polymeric resin as a wet-etching resist, allowing for the formation of positive patterns on GaAs wafers with various designed shapes and sharp edges at a high lateral resolution and depth, cost-effectively and time-efficiently.