期刊
CRYSTENGCOMM
卷 23, 期 5, 页码 1201-1206出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/d0ce01491e
关键词
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资金
- National Key Research and Development Program of China [2016YFB0400101, 2018YFE0125700]
- National Natural Science Foundation of China [61674009, 61974002, 11634002, 61521004, 61927806]
- Area Research and Development Project of Guangdong Province [2020B010172001]
By adopting a critical-temperature approach and optimizing growth conditions, AlGaN-based MQWs with an internal quantum efficiency greater than 80% and emission wavelength shorter than 280 nm were successfully grown on nano-patterned sapphire substrates. A deep-ultraviolet light-emitting-diode (DUV-LED) device was fabricated using these high IQE MQWs, achieving a light output power of 17.3 mW at an injection current of 100 mA, demonstrating excellent device performance.
Growth of AlGaN-based multiple quantum wells (MQWs) has been attempted on nano-patterned sapphire substrates (NPSSs). By adopting a critical-temperature approach and optimizing the growth conditions including the V/III ratio and Si doping level, high-efficiency AlGaN-based MQWs with an internal quantum efficiency (IQE) greater than 80% at room temperature are realized with an emission wavelength shorter than 280 nm. Taking such high IQE MQWs as the active region, a deep-ultraviolet light-emitting-diode (DUV-LED) device is fabricated and presents single peak emission with a wavelength of 276.1 nm. The light output power (LOP) of this device reaches 17.3 mW at an injection current of 100 mA, presenting an excellent device performance.
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