Realization of high efficiency AlGaN-based multiple quantum wells grown on nano-patterned sapphire substrates

Growth of AlGaN-based multiple quantum wells (MQWs) has been attempted on nano-patterned sapphire substrates (NPSSs). By adopting a critical-temperature approach and optimizing the growth conditions including the V/III ratio and Si doping level, high-efficiency AlGaN-based MQWs with an internal quantum efficiency (IQE) greater than 80% at room temperature are realized with an emission wavelength shorter than 280 nm. Taking such high IQE MQWs as the active region, a deep-ultraviolet light-emitting-diode (DUV-LED) device is fabricated and presents single peak emission with a wavelength of 276.1 nm. The light output power (LOP) of this device reaches 17.3 mW at an injection current of 100 mA, presenting an excellent device performance.

Automated summary

By adopting a critical-temperature approach and optimizing growth conditions, AlGaN-based MQWs with an internal quantum efficiency greater than 80% and emission wavelength shorter than 280 nm were successfully grown on nano-patterned sapphire substrates. A deep-ultraviolet light-emitting-diode (DUV-LED) device was fabricated using these high IQE MQWs, achieving a light output power of 17.3 mW at an injection current of 100 mA, demonstrating excellent device performance.