4.5 Article

Study on Fano resonance sensing characteristics of double-baffle MDM waveguide coupled disk cavity with absorption material

期刊

MODERN PHYSICS LETTERS B
卷 35, 期 3, 页码 -

出版社

WORLD SCIENTIFIC PUBL CO PTE LTD
DOI: 10.1142/S0217984921500652

关键词

Surface plasmon polaritons; absorption material; bimetallic baffle; disk cavity; Fano resonance

资金

  1. National Natural Science Foundation of China [61201112, 61475133]
  2. Natural Science Foundation of Hebei Province [F2016203188, F2016203245]
  3. China Postdoctoral Fund Project [2018M630279]
  4. China National Scholarship Fund Project [201808130004]
  5. Hebei University Science and Technology Research Project [ZD2018243]

向作者/读者索取更多资源

The proposed metal-dielectric-metal (MDM) waveguide coupled disk cavity structure with bimetallic baffle utilizes Fano resonance to achieve high sensitivity refractive index sensing characteristics. By optimizing geometry parameters and filling the absorption material InGaAsP, the structure can achieve a high figure of merit. This structure has potential applications for nanosensors, slow-light devices, and nano-optical switches.
A metal-dielectric-metal (MDM) waveguide coupled disk cavity structure with bimetallic baffle is proposed, which bases on the transmission characteristics of surface plasmon polaritons (SPPs) in subwavelength structure, and the absorption material InGaAsP is filled in the Fabry-Perot (F-P) cavity and disk cavity. The Fano resonance is an asymmetric spectral line formed by the destructive interference between the wide continuous state generated by the F-P resonator and the narrow discrete state interference generated by the disk cavity. Based on the coupled mode theory, the formation mechanism of the Fano resonance of the structure is qualitatively analyzed. The structure was simulated by finite element method to quantitatively analyze the influence of structural parameters and absorption material InGaAsP on the refractive index sensing characteristics. The proposed sensor yields sensitivity higher than 1360 nm/refractive index unit (RIU) and a figure of merit of 4.98 x 105 by optimizing the geometry parameters and filling the absorption material InGaAsP. This structure has potential applications for high integration of nanosensors, slow-light devices, and nano-optical switches.

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