Effect of Aluminum doping on potential barrier of gold-ZnO-Si Schottky barrier diode

In the present work, two different heterojunctions layered Schottky barrier diodes have been fabricated at 100 degrees C. First is Au/ZnO/p-Si Schottky barrier diode and second is Au/Al-ZnO/p-Si Schottky barrier diode where Aluminum doped ZnO has been used. Thin films of ZnO and Al-ZnO have been first analyzed using AFM, EDX, and XRD. Then potential barrier of the diodes have been evaluated by I-V characteristics to find out effect of Aluminum doping in ZnO on the barrier potential of Schottky diode. (C) 2019 Elsevier Ltd. All rights reserved.

Automated summary

Two different heterojunctions layered Schottky barrier diodes were fabricated at 100°C in this study. The thin films of ZnO and Al-ZnO were analyzed using AFM, EDX, and XRD, and the potential barrier of the diodes was evaluated by I-V characteristics to investigate the effect of Aluminum doping in ZnO on the barrier potential of Schottky diode.