相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Bipolar resistive switching of Pt/Ga2O3-x/SiC/Pt thin film with ultrahigh OFF/ON resistance ratios
Xia Shen et al.
NANOTECHNOLOGY (2020)
Hybrid density functional calculations of hyperfine coupling tensor for hole-type defects in MgAl2O4
Alexander Platonenko et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2020)
Enhanced Resistance Switching of Ga2O3 Thin Films by Ultraviolet Radiation
Yuehua An et al.
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY (2020)
Disappeared deep charge-states transition levels in the p-type intrinsic CsSnCl3 perovskite
Junyu Zhang et al.
APPLIED PHYSICS LETTERS (2019)
Defect stability and electronic structure of doped β-Ga2O3: A comprehensive ab initio study
Dan Sun et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2019)
Mechanical and thermodynamic properties of two-dimensional monoclinic Ga2O3
Jie Su et al.
MATERIALS & DESIGN (2019)
Mechanistic Analysis of Oxygen Vacancy-Driven Conductive Filament Formation in Resistive Random Access Memory Metal/NiO/Metal Structures
Handan Yildirim et al.
ACS APPLIED MATERIALS & INTERFACES (2018)
Unusual Electronic and Optical Properties of Two-Dimensional Ga2O3 Predicted by Density Functional Theory
Jie Su et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2018)
Intrinsic Defect Properties in Halide Double Perovskites for Optoelectronic Applications
Tianshu Li et al.
PHYSICAL REVIEW APPLIED (2018)
Theoretical insights and experimental characterization of -based OxRRAMs operation
B. Traore et al.
JOURNAL OF COMPUTATIONAL ELECTRONICS (2017)
Effects of oxygen vacancies on the structural and optical properties of β-Ga2O3
Linpeng Dong et al.
SCIENTIFIC REPORTS (2017)
Migration mechanisms and diffusion barriers of vacancies in Ga2O3
Alexandros Kyrtsos et al.
PHYSICAL REVIEW B (2017)
Choosing the correct hybrid for defect calculations: A case study on intrinsic carrier trapping in β-Ga2O3
Peter Deak et al.
PHYSICAL REVIEW B (2017)
Engineering interface-type resistance switching based on forming current compliance in ITO/Ga2O3: ITO/TiN resistance random access memory: Conduction mechanisms, temperature effects, and electrode influence
Chih-Hung Pan et al.
APPLIED PHYSICS LETTERS (2016)
Enhanced oxygen vacancy diffusion in Ta2O5 resistive memory devices due to infinitely adaptive crystal structure
Hao Jiang et al.
JOURNAL OF APPLIED PHYSICS (2016)
Reduction of Monoclinic HfO2: A Cascading Migration of Oxygen and Its Interplay with a High Electric Field
Boubacar Traore et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2016)
Abnormal bipolar resistive switching behavior in a Pt/GaO1.3/Pt structure
D. Y. Guo et al.
APPLIED PHYSICS LETTERS (2015)
Unipolar resistive switching behavior of amorphous gallium oxide thin films for nonvolatile memory applications
D. Y. Guo et al.
APPLIED PHYSICS LETTERS (2015)
First principle simulations on the effects of oxygen vacancy in HfO2-based RRAM
Yuehua Dai et al.
AIP ADVANCES (2015)
Design principles of tuning oxygen vacancy diffusion in SrZrO3 for resistance random access memory
Zhonglu Guo et al.
JOURNAL OF MATERIALS CHEMISTRY C (2015)
Highly transparent bipolar resistive switching memory with In-Ga-Zn-O semiconducting electrode in In-Ga-Zn-O/Ga2O3/In-Ga-Zn-O structure
X. B. Yan et al.
APPLIED PHYSICS LETTERS (2014)
Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
F. Pan et al.
MATERIALS SCIENCE & ENGINEERING R-REPORTS (2014)
HfOx as RRAM material - First principles insights on the working principles
Sergiu Clima et al.
MICROELECTRONIC ENGINEERING (2014)
Memristive devices for computing
J. Joshua Yang et al.
NATURE NANOTECHNOLOGY (2013)
Ab initio calculations on the defect structure of β-Ga2O3
T. Zacherle et al.
PHYSICAL REVIEW B (2013)
TaO x -based resistive switching memories: prospective and challenges
Amit Prakash et al.
NANOSCALE RESEARCH LETTERS (2013)
First-principles simulation of oxygen diffusion in HfOx: Role in the resistive switching mechanism
S. Clima et al.
APPLIED PHYSICS LETTERS (2012)
Influence of Oxygen Concentration on Resistance Switching Characteristics of Gallium Oxide
Jheng-Jie Huang et al.
IEEE ELECTRON DEVICE LETTERS (2012)
Metal oxide memories based on thermochemical and valence change mechanisms
J. Joshua Yang et al.
MRS BULLETIN (2012)
Metal-Oxide RRAM
H. -S. Philip Wong et al.
PROCEEDINGS OF THE IEEE (2012)
Metal oxide resistive memory switching mechanism based on conductive filament properties
G. Bersuker et al.
JOURNAL OF APPLIED PHYSICS (2011)
Electrochemical metallization memories-fundamentals, applications, prospects (vol 22, 254003, 2011)
Ilia Valov et al.
NANOTECHNOLOGY (2011)
Density functional theory study of TiO2/Ag interfaces and their role in memristor devices
Stefano Prada et al.
PHYSICAL REVIEW B (2011)
Thermochemical resistive switching: materials, mechanisms, and scaling projections
Daniele Ielmini et al.
PHASE TRANSITIONS (2011)
Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
Rainer Waser et al.
ADVANCED MATERIALS (2009)
Migration of oxygen vacancy in HfO2 and across the HfO2/SiO2 interface:: A first-principles investigation
Nathalie Capron et al.
APPLIED PHYSICS LETTERS (2007)
Oxygen sensing properties at high temperatures of β-Ga2O3 thin films deposited by the chemical solution deposition method
Marilena Bartic et al.
JOURNAL OF APPLIED PHYSICS (2007)
Identification of a determining parameter for resistive switching of TiO2 thin films -: art. no. 262907
C Rohde et al.
APPLIED PHYSICS LETTERS (2005)
Ga2O3 thin film for oxygen sensor at high temperature
M Ogita et al.
APPLIED SURFACE SCIENCE (2001)
A climbing image nudged elastic band method for finding saddle points and minimum energy paths
G Henkelman et al.
JOURNAL OF CHEMICAL PHYSICS (2000)
Improved tangent estimate in the nudged elastic band method for finding minimum energy paths and saddle points
G Henkelman et al.
JOURNAL OF CHEMICAL PHYSICS (2000)