Non-fullerene-based organic photodetectors for infrared communication

Solution-processed organic photodetectors (OPDs) sensitive to infrared (IR) light have the potential to be used in various technologies from health monitoring to communication. These detectors require low bandgap materials absorbing photons beyond 750 nm with high responsivity. In this work, an ultra-low bandgap non-fullerene acceptor (NFA) that absorbs light until 1020 nm is developed. Used in a bulk heterojunction (BHJ)-based device, the photodetector has a maximum responsivity of 0.50 A W-1 at 890 nm without bias voltage comparable with silicon-based detectors. Due to high and balanced mobilities of 10(-4) cm(2) V-1 s(-1), the device has a fast speed of response to IR (i.e. rise and decay time less than 4 mu s) and minor damping of 1 dB in the IR communication range (38-50 kHz). The organic photodetector transcripts with accuracy the message emitted around 910 nm from a commercial remote control, thus demonstrating the potential of organic electronics for infrared communication.

Automated summary

A new ultra-low bandgap non-fullerene acceptor has been developed, with a maximum responsivity of 0.50 A W-1 at 890 nm in a solution-processed organic photodetector. The device exhibits high and balanced mobilities, resulting in fast response to infrared light and minor damping in the IR communication range. The organic photodetector accurately transmits messages emitted at around 910 nm, demonstrating the potential for organic electronics in infrared communication.