期刊
JOURNAL OF MATERIALS CHEMISTRY C
卷 9, 期 9, 页码 3229-3238出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/d1tc00077b
关键词
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资金
- CityU SGP [9380076]
- Research Grants Council of Hong Kong SAR [CityU 11306520]
This study presents a non-catalytic approach for growing all-inorganic CsPbX3 perovskite nanowires using chemical vapor deposition, revealing a growth mechanism involving nucleation of halide nanoparticles, structural transformations, and eventual formation of complete nanowires. Spectroscopic measurements show that nanoscale features at different growth stages have similar material properties as the final nanowires, suggesting potential applications in novel optoelectronic devices.
The growth of high-quality nanostructures using chemical vapor deposition (CVD) normally requires metal catalysts, which when incorporated in the nanostructures may severely affect their properties. Here, we report on the non-catalytic CVD growth of all-inorganic CsPbX3 (X = Br, Cl) perovskite nanowires (NWs) with an emphasis on understanding the growth mechanism via detailed electron microscopy and spectroscopic studies at different stages of the growth. We show that the chemical vapors initiate the nucleation and growth of halide nanoparticles, followed by structural transformations through axial elongation into nano-capsules and dumbbells, and eventually these dumbbells meet and form complete NWs. This growth mechanism is independent of the substrate crystallinity and detailed spectroscopic measurements demonstrate that nanoscale features at different growth stages have similar material properties as the final NWs. We believe that this self-assembly mechanism can be extended to understand the evolution of nanostructures in other semiconductor materials and to tune their characteristics to enhance their functionalities for novel optoelectronic devices.
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