期刊
SCIENCE OF ADVANCED MATERIALS
卷 13, 期 1, 页码 30-35出版社
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/sam.2021.3823
关键词
HEMT; Two-Step Gate Recess; Enhancement-Mode; Electroless Plating; Threshold Voltage; ON/OFF Drain Current Ratio
资金
- Ministry of Science and Technology of the Republic of China
- MOST [108-2221-E-017-006, MOST 108-2221-E-006-045]
This study presents an AlGaN/GaN enhancement-mode HEMT fabricated with a two-step gate recess and electroless plating method. The EP-HEMT shows improved performance compared to a traditional HEMT, with higher drain saturation current, transconductance, lower gate leakage current, and higher ON/OFF drain current ratio.
In this work, an AlGaN/GaN enhancement-mode high electron mobility transistor (HEMT) with two-step gate recess and electroless plating (EP) approaches is reported. Scanning electron microscopy and atomic force microscopy surface analysis are used to analysis the related properties of the EP-gate structure. A positive threshold voltage Vth of 0.68 V is obtained for the enhancement-mode EP-HEMT. In addition, a traditional HEMT based on thermal-evaporation gate is compared for the demonstration of the studied EP-HEMT with the improved performance, such as a higher maximum drain saturation current of 228.9 mA/mm, a higher maximum transconductance of 107.2 mS/mm, a lower gate leakage current of 1.2 x 10(-7) mA/mm, and a higher ON/OFF drain current ratio of 4.57 x 10(5).
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