Characterization of defect levels in β-Ga2O3 single crystals doped with tantalum

We present a detailed study on the crystal structure of 0.10 mol% Ta-doped beta-Ga2O3 crystals before and after annealing treatment in air by high-resolution X-ray diffraction and Raman spectroscopy, as well as the detection of point defects through the variation of photoluminescence excitation (PLE) and photoluminescence (PL) with temperature. Based on the experimental data, the band diagram of the 0.10 mol% Ta-doped beta-Ga2O3 crystal is constructed. The crystal quality of the 0.10 mol% Ta-doped beta-Ga2O3 crystal was improved after annealing treatment. The PL spectra exhibited two ultraviolet emission bands (UV similar to 3.59 eV, UV ' similar to 3.22 eV) and a blue emission band (BB similar to 2.73 eV) , which are ascribed to the recombination of self-trapped excitons at the trigonal O-I and O-II sites and gallium vacancies in the (2-) charge state (tetrahedral site), respectively. The work function of the 0.10 mol% Ta-doped beta-Ga2O3 crystal increased from 5.28 eV to 5.38 eV as a result of annealing treatment.

Automated summary

A detailed study was conducted on the crystal structure of 0.10 mol% Ta-doped beta-Ga2O3 crystals before and after annealing treatment using high-resolution X-ray diffraction, Raman spectroscopy, and photoluminescence techniques. The crystal quality improved after annealing, and the photoluminescence spectra showed distinct emission bands attributed to specific defects in the crystal lattice. Overall, annealing treatment had a positive effect on the properties of the crystal.