Aqueous Solution Derived Amorphous Indium Doped Gallium Oxide Thin-Film Transistors

In this study, we report high-performance amorphous Ga2O3 metal-oxide (AMO) thin film transistor (TFT) using an low-temperature solution-process coupling with In alloy engineering. In doping can lower the activation temperature of gallium oxide and increase the oxygen vacancy concentration to further activate the device. The optical bandgap of IGO film can be changed from 5.3 to 4.25 eV with the In doping concentration (C-In) increasing from 0 % to 50 %. All TFTs with IGO channels exhibit n-type transistor characteristics and the evolution of their key electrical parameters with the In-dopant is well elucidated by the structural and morphological characterization. With the increase of C-In, the performance of the device becomes better. Finally, a saturation field-effect mobility of 3.63 cm(2)V(-1)s(-1), a current on/off ratio of 10(6), and a threshold voltage of 2.5 V are achieved by the In0.5Ga0.5O (C-In = 50%) based device. The In0.5Ga0.5O TFT also demonstrates good bias stress stability. Under the action of 20 V and -20 V gate bias for 3000 s, the Delta V-TH is +2.27 V and -1.95 V, respectively.

Automated summary

This study reports a high-performance amorphous Ga2O3 metal-oxide thin film transistor using a low-temperature solution process coupled with In alloy engineering. In doping can alter the optical bandgap of the film and significantly improve the device performance.