4.7 Article

Three-Dimensional Integration of Functional Oxides and Crystalline Silicon for Optical Neuromorphic Computing Using Nanometer-Scale Oxygen Scavenging Barriers

期刊

ACS APPLIED NANO MATERIALS
卷 4, 期 2, 页码 2153-2159

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsanm.0c03459

关键词

transition metal oxide; perovskite; molecular beam epitaxy; heterostructure; electronics; photonics

资金

  1. National Science Foundation Graduate Research Fellowship [DGE-1610403]
  2. Air Force Office of Scientific Research [FA9550-12-10494, FA9550-18-1-0053]
  3. Global Research and Development Center Program [2018K1A4A3A01064272]
  4. Brain Pool Program through the National Research Foundation of Korea (NRF) - Ministry of Science and ICT [2019H1D3A2A01061938]
  5. Louis Beecherl, Jr. Endowment Funds
  6. National Research Foundation of Korea [2019H1D3A2A01061938] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

This paper presents a new method to achieve high-quality Si(001)/TMO/Si(001)/TMO heterostructures without wafer bonding, enabling the three-dimensional integration of functional complex oxides and active Si(001) layers. The results have significant implications for on-chip hardware implementations of neuromorphic computing based on optical signals.
Dating to the first reports of epitaxial oxide deposition on Si(001), the integration of complex oxides on silicon has been a fast-moving area of research, where fundamental materials physics is intimately connected to tremendous technological promise in such areas as integrated electronics, optical neuromorphic and quantum computing, and sensing, to name a few. Despite their great promise, devices relying on the co-integration of silicon and epitaxial perovskites are typically limited to basic, planar geometries due to practical issues with their fabrication. In this paper, we overcome these long-standing challenges by developing a method to produce high-quality Si(001)/TMO/Si(001)/TMO heterostructures without wafer bonding, resulting in the straightforward three-dimensional integration of functional complex oxides and active Si(001) layers into a technologically relevant platform that is needed for on-chip hardware implementations of neuromorphic computing based on optical signals. We present detailed structural and chemical characterization of our heterostructures and discuss generalized design rules for their fabrication. Our results exponentially expand the universe of practically achievable TMO-based integrated devices and push this promising class of materials closer to realizing their hill technological potential.

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