4.6 Article

Probing the Variation of the Intervalley Tunnel Coupling in a Silicon Triple Quantum Dot

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Summary: The study describes a spectroscopic method for probing excited states in isolated Si/Si-Ge double quantum dots and measures the energies of valley excited states to evaluate the dependence of valley splitting on quantum well width and other epitaxial conditions. The results indicate that narrower wells can be beneficial for increasing valley splittings, but this effect may be confounded by variations in growth and fabrication conditions. These findings highlight the importance of valley-splitting measurements in guiding the development of Si qubits.

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