4.8 Article

High speed growth of MAPbBr3 single crystals via low-temperature inverting solubility: enhancement of mobility and trap density for photodetector applications

期刊

NANOSCALE
卷 13, 期 17, 页码 8275-8282

出版社

ROYAL SOC CHEMISTRY
DOI: 10.1039/d1nr01600h

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资金

  1. Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [NRF-2018R1A6A1A03025340, NRF-2016R1D1A1B01009032, NRF-2020R1I1A1A01068700]
  2. Ministry of Science, ICT & Future Planning [NRF-2017R1A2B3011822]

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Organic-inorganic hybrid perovskites have gained attention as a promising material for optoelectronic applications. Single crystal structures of perovskites offer better stability and lower trap density compared to polycrystalline thin films. The use of inverse temperature crystallization at low temperatures shows potential for growing sizable CH3NH3PbBr3 single crystals with high quality for optoelectronic devices.
There has been growing interest in organic-inorganic hybrid perovskites as a promising candidate for optoelectronic applications due to their superior physical properties. Despite this, most of the reported perovskite devices based on polycrystalline thin films suffer immensely from poor stability and high trap density owing to grain boundaries limiting their performance. Perovskite single crystal structures have been recently explored to construct stable devices and reduce the trap density compared to their thin-film counterparts. We present a novel method of growing sizable CH3NH3PbBr3 single crystals based on the high solubility characteristic of hybrid perovskites at low temperatures within inverse temperature crystallization. We compared both the crystallinity of perovskite single crystal structures and optoelectronic charge transport of single crystal photodetectors as a function of dissolution temperature. The performance of the photodetector fabricated with our large-scaled single crystal with high quality demonstrated low trap density, high mobility, and high photoresponse.

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