期刊
PHYSICAL REVIEW RESEARCH
卷 3, 期 2, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevResearch.3.023075
关键词
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资金
- Deutsche Forschungsgemein-schaft [SFB 1143, 247310070]
- Emmy Noether programme [WU595/3-3, ME4844/1-1, 327807255]
- European Research Council (ERC) under the European Unions' Horizon 2020 research and innovation programme [647276-MARS-ERC-2014-CoG]
This study utilized low-temperature scanning tunneling microscopy to investigate the nanoscale electronic structure of the Mott insulator Sr2IrO4-delta, revealing an enhanced local density of states at individual defects and a chiral behavior in the topography. The visualization of local enhanced conductance from overlapping defect states suggests a percolative insulator-to-metal transition in Sr2IrO4-delta.
Despite many efforts to rationalize the strongly correlated electronic ground states in doped Mott insulators, the nature of the doping-induced insulator-to-metal transition is still a subject under intensive investigation. Here, we probe the nanoscale electronic structure of the Mott insulator Sr2IrO4-delta with low-temperature scanning tunneling microscopy and find an enhanced local density of states (LDOS) inside the Mott gap at the location of individual defects which we interpret as defects at apical oxygen sites. A chiral behavior in the topography for those defects has been observed. We also visualize the local enhanced conductance arising from the overlapping of defect states which induces finite LDOS inside of the Mott gap. By combining these findings with the typical spatial extension of isolated defects of about 2 nm, our results indicate that the insulator-to-metal transition in Sr2IrO4-delta could be percolative in nature.
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