Quantum spin Hall effect in Ta2M3Te5 (M = Pd, Ni)

Quantum spin Hall (QSH) effect with great promise for the potential application in spintronics and quantum computing has attracted extensive research interest from both theoretical and experimental researchers. Here, we predict monolayer Ta2Pd3Te5 can be a QSH insulator based on first-principles calculations. The interlayer binding energy in the layered van der Waals compound Ta2Pd3Te5 is 19.6 meV/angstrom(2); thus, its monolayer/thinfilm structures could be readily obtained by exfoliation. The band inversion near the Fermi level (E F ) is an intrinsic characteristic, which happens between Ta-5d and Pd-4d orbitals without spin-orbit coupling (SOC). The SOC effect opens a global gap and makes the system a QSH insulator. With the d-d band-inverted feature, the nontrivial topology in monolayer Ta2Pd3Te5 is characterized by the time-reversal topological invariant Z(2) = 1, which is computed by the one-dimensional (1D) Wilson loop method as implemented in our first-principles calculations. The helical edge modes are also obtained using surface Green's function method. Our calculations show that the QSH state in Ta2M3Te5 (M = Pd, Ni) can be tuned by external strain. These monolayers and thin films provide feasible platforms for realizing QSH effect as well as related devices.

Automated summary

The research predicts that monolayer Ta2Pd3Te5 can act as a QSH insulator based on first-principles calculations, with nontrivial topology. It is also found that the QSH state in Ta2M3Te5 (M = Pd, Ni) can be tuned by external strain, as confirmed through experimental and computational analysis.