期刊
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
卷 68, 期 8, 页码 6818-6827出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TIE.2020.3007089
关键词
Commutation; emitter turn-OFF thyristor (ETO); inductance measurement; integrated gate commutated thyristor (IGCT); power semiconductor devices; press pack
资金
- Key projects of the National Natural Science Foundation of China [51837006]
- National Key Research and Development Program [2018YFB0904600]
This article presents a precise measurement methodology for nH-level gate electrode inductance of unity-gain turn-off devices. By utilizing a customized extraction method and gate current measurement method, the measurement achieved ultrahigh accuracy.
Gate electrode inductance is a key factor for the controllable current capacity of unity-gain turn-off devices. However, the precise and credible measurement of this nH-level inductance is very difficult due to the compact structure of housing package. In this article, a precise measurement methodology of nH-level gate electrode inductance based on calculation-error-free algorithm for unity-gain turn-off devices is proposed. First, the turn-off process was modeled and discussed. Based on the feature of different stages, a customized extraction method is proposed for nH-level inductance measurement with ultrahigh accuracy. Then, a gate current measurement method for separate cathode rings with minimum inductance introduction was invented and discussed. After careful measurement and calculation, the gate electrode inductance for each region was derived and the abrupt change in gate contact region was observed and analyzed. The inductances measured in this article can be further utilized for housing structure optimization and lateral arrangement of segments on unity-gain turn-off chips.
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