期刊
ADVANCED PHOTONICS RESEARCH
卷 2, 期 6, 页码 -出版社
WILEY
DOI: 10.1002/adpr.202000194
关键词
3D Dirac semimetal; Cd3As2; heterojunction photodetectors; tungsten disulfide; ultra-low dark current
资金
- Outstanding Youth Foundation of National Natural Science Foundation of China [61922022]
- Foundation for Innovative Research Groups of the National Natural Science Foundation of China [61421002]
- National Natural Science Foundation of China [61875031]
This study demonstrates a high-performance photodetector based on a Cd3As2/WS2 heterojunction with superior performance including high on/off ratio, responsivity, and detectivity. The excellent performance is mainly attributed to high-quality heterostructure interface, strong light absorption capacity, and ultra-low dark current.
Recently, heterojunction photodetectors have attracted significant interest due to the multiple degrees of freedom reorganization, integrating advantages of different typed materials. Herein, a high-performance photodetector based on a 3D Dirac semimetal Cd3As2/tungsten disulfide (WS2) heterojunction is demonstrated, which is constructed by directly transferring exfoliated 2D few layer WS2 on Cd3As2 nano-belt and following by annealing treatment. The resulting Cd3As2/WS2 heterojunction device presents superior performance with a high on/off ratio (approximate to 5.3x10(4)) and a responsivity (R-i) of about 223.5AW(-1) at 520nm, as well as an outstanding detectivity (D*) of about 2.05x10(14) Jones at 808nm near-IR waveband. However, the optimized noise equivalent power (NEP) is evaluated about 6.17x10(-14)WHz(-1/2) by the noise power density spectrum. The excellent performance can be attributed to a high-quality heterostructure interface, strong light absorption capacity, and ultralow dark current in a Cd3As2/WS2 heterojunction system. This work provides a promising platform to develop a high-performance optoelectronic device based on 3D Dirac semimetal and 2D TMDs families.
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