期刊
FERROELECTRICS
卷 519, 期 1, 页码 157-163出版社
TAYLOR & FRANCIS LTD
DOI: 10.1080/00150193.2017.1361239
关键词
ZnO; Schottky contact; caf
Here we present the local electrical characterization of individual ZnO nanorods (NRs) synthesized by spin coating method using precursor sol. Conductive atomic force microscopy (CAFM) was employed for investigating the local conductivity of these ZnO NRs. I-V curves studies on hexagonal top planes and rectangular side planes have shown nano-Schottky contact between ZnO NRs and tip. The Schottky barrier heights (SBHs) have been calculated to approximate to 0.63eV, and approximate to 0.55eV for these planes which are attributed to the polar and nonpolar faces respectively. This work provides a path way for constructing highly integrated nanoscale electronic devices with precise control.
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