期刊
ACS APPLIED ELECTRONIC MATERIALS
卷 3, 期 4, 页码 1873-1885出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsaelm.1c00114
关键词
tin phthalocyanine; silicon phthalocyanine; organic photovoltaics; organic thin-film transistors; photostability; solution processing; N-type organic semiconductor
资金
- Natural Sciences and Engineering Research Council of Canada (NSERC) [RGPIN/2015-509 03987, STPGP 506661-17]
- University of Ottawa
- Canada Research Chair Program
Tin(IV) phthalocyanines show promise as low-cost materials for organic electronic devices, but are relatively understudied compared to their silicon analogues. This study synthesized seven novel SnPcs and investigated their performance in OPVs and OTFTs. While these materials decreased efficiency as ternary additives in OPVs, four of them exhibited higher electron field-effect mobilities in OTFTs compared to SiPc analogues.
Tin(IV) phthalocyanines (SnPcs) are promising candidates for low-cost organic electronic devices, and have been employed in organic photovoltaics (OPVs) and organic thin-film transistors (OTFTs). However, they remain relatively understudied compared to their silicon phthalocyanine (SiPc) analogues. Previously, we reported the first solution-processed SnPc semiconductors for OTFTs and OPVs; however, the performances of these derivatives were unexpected. Herein to further study the behavior of these derivatives in OPVs and OTFTs, we report the synthesis along with optical and thermal characterization of seven axially substituted (OR)(2)-SnPcs, five of which were synthesized for the first time. Density functional theory (DFT) was used to predict charge-carrier mobilities for our materials in their crystal state. The application of these SnPcs as ternary additives in poly(3-hexylthiophene) (P3HT)/phenyl-C-61-butyric acid methyl ester (PC61BM) OPVs and as semiconductors in solution-processed n-type OTFTs was also investigated. When employed as ternary additives in OPVs, all (OR)(2)-SnPcs decreased the power conversion efficiency, open-circuit voltage, short-circuit current, and fill factor. However, in OTFTs, four of the seven materials exhibited greater electron field-effect mobility with similar threshold voltages compared to their previously studied SiPc analogues. Among these SnPcs, bis(triisobutylsilyl oxide) SnPc displayed the greatest electron field-effect mobility of 0.014 cm(2) V-1 s(-1), with a threshold voltage of 31.4 V when incorporated into OTFTs. This difference in electrical performance between OTFT and OPV devices was attributed to the low photostability of SnPcs.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据