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Synthesis, solution dynamics and chemical vapour deposition of heteroleptic zinc complexes via ethyl and amide zinc thioureides

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CHEMICAL SCIENCE
卷 -, 期 -, 页码 -

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ROYAL SOC CHEMISTRY
DOI: 10.1039/d1sc01846a

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  1. EPSRC [EP/R513143/1]

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Various thiosemicarbazide compounds were synthesized and used to prepare a series of heteroleptic complexes through reactions with other compounds. Some of these compounds can also serve as precursor materials for the deposition of buffer layers in thin film photovoltaic devices.
Ethyl and amide zinc thioureides [(LZnEt)-Zn-1](2) (1), [L-1*ZnEt](2) (2) and [(LZn)-Zn-1(N(SiMe3)(2))](2) (3) have been synthesised from the equimolar reaction of thiourea ligands (HL1 = (PrN)-Pr-i(H)CSNMe2 and HL1* = PhN(H)CSNMe2) with diethyl zinc and zinc bis[bis(trimethylsilyl)amide] respectively. New routes towards heteroleptic complexes have been investigated through reactions of 1, 2 and 3 with beta-ketoiminates (HL2 = [(Me) CN(H){Pr-i}-CHC(Me)]O]), bulky aryl substituted beta-diiminates (HL3 = [(Me)CN(H){Dipp}-CHC(Me)]=N {Dipp}] (Dipp = diisopropylphenyl) and HL3* = [(Me)CN(H){Dep}-CHC(Me)=]N{Dep}] (Dep = diethylphenyl)) and donor-functionalised alcohols (HL4 = Et2N(CH2)(3)OH and HL4* = Me2N(CH2)(3)OH) and have led to the formation of the heteroleptic complexes [L-1*ZnL3*] (5), [(LZnL4)-Zn-1](2) (6), [(LZnL4)-Zn-1*](2) (7), [L-1*ZnL4] (8) and [L-1*ZnL4*] (9). All complexes have been characterised by H-1 and C-13 NMR, elemental analysis, and the X-ray structures of HL1*, 1, 2, 6 and 7 have been determined via single crystal X-ray diffraction. Variable temperature H-1, COSY and NOESY NMR experiments investigating the dynamic behaviour of 5, 6 and 7 have shown these molecules to be fluxional. On the basis of solution state fluxionality and thermogravimetric analysis (TGA), alkoxyzinc thioureides 6 and 7 were investigated as single-source precursors for the deposition of the ternary material zinc oxysulfide, Zn(O,S), a buffer layer used in thin film photovoltaic devices. The aerosol-assisted chemical vapour deposition (AACVD) reaction of 7 at 400 degrees C led to the deposition of the heterodichalcogenide material Zn(O,S), which was confirmed by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray analysis (EDX), with optical properties investigated using UV/vis spectroscopy, and surface morphology and film thickness examined using scanning electron microscopy (SEM).

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