Raman heterodyne determination of the magnetic anisotropy for the ground and optically excited states of Y2SiO5 doped with Sm3+

We present the full magnetic g tensors of the (6)H(5/2)Z(1) and (4)G(5/2)A(1) electronic states for both crystallographic sites in Sm3+:Y2SiO5, deduced through the use of Raman heterodyne spectroscopy performed along nine different crystallographic directions. The maximum principle g' values were determined to be 0.447 (site 1) and 0.523 (site 2) for the ground state and 2.490 (site 1) and 3.319 (site 2) for the excited state. The determination of these g tensors provide essential spin Hamiltonian parameters that can be utilized in future magnetic and hyperfine studies of Sm3+:Y2SiO5, with applications in quantum information storage and communication devices.

Automated summary

In this study, the full magnetic g tensors of the (6)H(5/2)Z(1) and (4)G(5/2)A(1) electronic states in Sm3+:Y2SiO5 were presented, with maximum principle g' values determined for ground and excited states at two crystallographic sites. These g tensors provide important spin Hamiltonian parameters for future magnetic and hyperfine studies of Sm3+:Y2SiO5, with potential applications in quantum information storage and communication devices.